发明名称 |
Fabrication of shielded gate trench MOSFET with increased source-metal contact |
摘要 |
A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising: a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a gate top dielectric material disposed over the gate electrode; a body region adjacent to the gate trench; a source region embedded in the body region; a metal layer disposed over at least a portion of a gate trench opening and at least a portion of the source region, wherein: the source region has a curved sidewall portion that is adjacent to the gate trench, and that extends above the gate top dielectric material. |
申请公布号 |
US9559179(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201514871826 |
申请日期 |
2015.09.30 |
申请人 |
Alpha and Omega Semiconductor Incorporated |
发明人 |
Chen John |
分类号 |
H01L29/66;H01L29/423;H01L29/08;H01L29/40;H01L29/78;H01L21/265;H01L29/10;H01L29/417;H01L29/45;H01L29/49 |
主分类号 |
H01L29/66 |
代理机构 |
Van Pelt, Yi & James LLP |
代理人 |
Van Pelt, Yi & James LLP |
主权项 |
1. A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising:
a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a gate top dielectric material disposed over the gate electrode; a body region adjacent to the gate trench; a source region embedded in the body region; a metal layer disposed over at least a portion of a gate trench opening and at least a portion of the source region, wherein: the source region has a curved sidewall portion that is adjacent to the gate trench, and that extends above the gate top dielectric material. |
地址 |
Sunnyvale CA US |