Semiconductor device and integrated circuit

摘要

A semiconductor device includes a first semiconductor region that has an external profile including at least one corner, and that includes a semiconductor of a first conductivity type, and a first insulation region that surrounds an outer periphery of the first semiconductor region, and that includes an insulator that, at a corner portion corresponding to the corner, has a depth deeper than a depth at a location other than the corner portion. The semiconductor device further includes a second semiconductor region that surrounds an outer periphery of the first insulation region, and that includes a semiconductor of a second conductivity type, and a second insulation region that surrounds an outer periphery of the second semiconductor region, and that includes an insulator that is deeper than the depth of the first insulation region at the location other than the corner portion.

主权项

1. A semiconductor device comprising:
a first semiconductor region that has an external profile including at least one corner in a plan view, and that includes a semiconductor of a first conductivity type; a first insulation region that surrounds an outer periphery of the first semiconductor region in a plan view, and that has a ring shape in a plan view; a first insulator that is a part of the first insulation region, and that is located at a corner portion of the ring shape of the first insulation region in a plan view; a second insulator that is a part of the first insulation region, that is located at a location other than the corner portion of the first insulation region in a plan view, and that has a depth shallower than a depth of the first insulator; a second semiconductor region that surrounds an outer periphery of the first insulation region in a plan view, and that includes a semiconductor of a second conductivity type that is different from the first conductivity type; a second insulation region that surrounds an outer periphery of the second semiconductor region; and a third insulator that is a part of the second insulation region, and that has a depth deeper than the depth of the second insulator.