发明名称 Semiconductor device
摘要 A semiconductor device includes a fuse element that can be cut and removed by laser irradiation. The fuse element has a large width portion having a large sectional area to be irradiated with a laser spot, and two small width portions having a small sectional area connected to opposite sides of the large width portion. Penetration of moisture is suppressed even after cutting of the fuse element since the large width portion is removed by the laser irradiation and only the small width portions having the small sectional area remain as exposed cut surfaces.
申请公布号 US9559055(B2) 申请公布日期 2017.01.31
申请号 US201514602516 申请日期 2015.01.22
申请人 SII Semiconductor Corporation 发明人 Kitajima Yuichiro
分类号 H01L23/525 主分类号 H01L23/525
代理机构 Adams & Wilks 代理人 Adams & Wilks
主权项 1. A semiconductor device, comprising a fuse element for laser cutting, the fuse element being arranged on an insulating film formed on a silicon substrate and being covered by a protective insulating film, the fuse element comprising: a large sectional area region having opposed sides; andsmall sectional area regions each connected to and adjacent to one of the sides of the large sectional area region so that the large sectional area region is connected between the small sectional area regions,the large sectional area region comprising a thick portion, and each of the small sectional area regions comprising a thin portion, the thick portion being thicker than the thin portion, andthe large sectional area region being configured to be irradiated with a laser when laser cutting the fuse element to remove the large sectional area region and expose cut surfaces of the small sectional areas regions.
地址 JP