| 发明名称 | Method of forming oxide thin film and method of fabricating oxide thin film transistor using hydrogen peroxide | ||
| 摘要 | Provided are a method of forming an oxide thin film using hydrogen peroxide, and a method of fabricating an oxide thin film transistor using hydrogen peroxide. Embodiments of the present disclosure provide methods of forming an oxide film, including: mixing hydrogen peroxide with a precursor solution in which a precursor material is dissolved in a solvent; applying the precursor solution mixed with the hydrogen peroxide to a substrate; heat treating the substrate. | ||
| 申请公布号 | US9558941(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201414244230 | 申请日期 | 2014.04.03 |
| 申请人 | Industry-Academic Cooperation Foundation, Yonsei University | 发明人 | Kim Hyun Jae;Kwon Jeong Moo |
| 分类号 | H01L29/786;H01L29/12;H01L29/04;H01L21/336;H01L21/441;H01L21/02;H01L29/66 | 主分类号 | H01L29/786 |
| 代理机构 | Carter, DeLuca, Farrell & Schmidt, LLP | 代理人 | Carter, DeLuca, Farrell & Schmidt, LLP |
| 主权项 | 1. A method of forming an oxide film, comprising: mixing hydrogen peroxide with a precursor solution in which a precursor material is dissolved in a solvent; applying the precursor solution mixed with the hydrogen peroxide to a substrate; and heat treating the substrate, wherein the precursor solution is prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate, and zinc acetate dihydrate in 2-methoxyethanol. | ||
| 地址 | Seoul KR | ||