| 发明名称 | Method of modifying electrostatic chuck and plasma processing apparatus | ||
| 摘要 | A method of modifying an electrostatic chuck that electrostatically attracts a processing object is provided. The method includes a gas supplying step of supplying a gas containing hydrogen (H) and oxygen (O) into a chamber accommodating the electrostatic chuck having a surface that is fluorinated; and a modifying step of turning the gas supplied to the chamber into plasma using a high frequency power, exposing the electrostatic chuck to the plasma, and modifying the fluorinated surface of the electrostatic chuck. | ||
| 申请公布号 | US9558919(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201314100235 | 申请日期 | 2013.12.09 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Kondo Takamitsu;Shimogama Shingo |
| 分类号 | C03C25/68;H01J37/32 | 主分类号 | C03C25/68 |
| 代理机构 | IPUSA, PLLC | 代理人 | IPUSA, PLLC |
| 主权项 | 1. A method of modifying an electrostatic chuck that electrostatically attracts a processing object, the method comprising: a gas supplying step of supplying a gas containing hydrogen (H) and oxygen (O) into a chamber accommodating the electrostatic chuck having a surface that is fluorinated; and a modifying step of turning the gas supplied to the chamber into plasma using a radio frequency power, exposing the electrostatic chuck to the plasma, and modifying the fluorinated surface of the electrostatic chuck. | ||
| 地址 | Tokyo JP | ||