Method of processing a silicon substrate and method of manufacturing a substrate for a liquid ejection head

摘要

Performed are a non-through hole forming step of partitioning a supply path forming region of a second surface into a first region corresponding to a forming position of a beam, a second region located adjacent to the first region on both sides thereof, and a third region that is none of the first region and the second region, and forming a plurality of non-through holes in the second region and the third region, and an etching step of subjecting a silicon substrate to anisotropic etching from the second surface, to thereby form the supply path and the beam in the supply path. In the non-through hole forming step, at least one of an interval or a depth of the non-through holes is caused to differ in the second region and the third region, to thereby control the shape and dimension of the beam to be formed in the etching step.

主权项

1. A method of processing a silicon substrate, comprising forming a supply path in a silicon substrate having a first surface and a second surface on an opposite side of the first surface, the supply path penetrating the silicon substrate and including a beam configured to connect opposed sides of the supply path to each other,
the method further comprising: a non-through hole forming step of partitioning, for each beam, a region of the second surface in which the supply path is to be formed, into a first region that corresponds to a forming position of the beam, a second region that is adjacent to the first region on both sides of the first region, and a third region that is none of the first region and the second region, and forming a plurality of non-through holes, which are prevented from penetrating the silicon substrate, in the second region and the third region with a predetermined depth from the second surface; and an etching step of subjecting the silicon substrate having the plurality of non-through holes formed therein, to anisotropic etching from the second surface, to thereby form the supply path and the beam in the supply path, the non-through hole forming step comprising causing at least one of an interval or a depth of each of the plurality of non-through holes to differ in the second region and the third region.