Semiconductor devices and methods of manufacturing the same

摘要

A semiconductor device includes first conductive lines and first and second insulation patterns on a substrate, first structures spaced apart from each other on the first conductive lines, a variable resistance pattern on the first structures, and a second electrode on the variable resistance pattern. The first conductive lines extend in a first direction. The first structures include a switching pattern and a first electrode sequentially stacked. The first insulation pattern fills a space between the first structures in a second direction and the first insulation pattern has a first top surface higher than a top surface of the first structures. The second insulation pattern fills a space between the first structures in the first direction, and the second insulation pattern has a second top surface higher than a top surface of the first structures. The variable resistance pattern fills an opening defined by the first and second insulation patterns.

主权项

1. A semiconductor device, comprising:
a substrate; a plurality of first conductive lines on the substrate, the first conductive lines extending in a first direction; a plurality of first structures on the first conductive lines, the first structures being spaced apart from each other, the first structures including a switching pattern and a first electrode sequentially stacked, and top surfaces of the switching pattern and the first electrode being substantially coplanar with each other; a first insulation pattern on the substrate, the first insulation pattern extending in the first direction between the first structures to fill a space between the first structures in a second direction that is substantially perpendicular to the first direction, and the first insulation pattern having a first top surface that is higher than a top surface of the first structures; a second insulation pattern on the substrate, the second insulation pattern extending in the second direction between the first structures to fill a space between the first structures in the first direction, and the second insulation pattern having a second top surface that is higher than a top surface of each of the first structures; a variable resistance pattern on the first structures, the variable resistance pattern filling an opening defined by the first and second insulation patterns; and a second electrode on the variable resistance pattern.