发明名称 Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition
摘要 Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such common-substrate devices are described. For example, a semiconductor structure includes a first semiconductor device having a first nanowire or semiconductor body disposed above a crystalline substrate. The first nanowire or semiconductor body is composed of a semiconductor material having a first global crystal orientation. The semiconductor structure also includes a second semiconductor device having a second nanowire or semiconductor body disposed above the crystalline substrate. The second nanowire or semiconductor body is composed of a semiconductor material having a second global crystal orientation different from the first global orientation. The second nanowire or semiconductor body is isolated from the crystalline substrate by an isolation pedestal disposed between the second nanowire or semiconductor body and the crystalline substrate.
申请公布号 US9559160(B2) 申请公布日期 2017.01.31
申请号 US201113996506 申请日期 2011.12.23
申请人 Intel Corporation 发明人 Cappellani Annalisa;Tolchinsky Peter G.;Kuhn Kelin J.;Glass Glenn A.;Le Van H.
分类号 H01L29/04;H01L29/66;H01L29/775;H01L27/12;B82Y10/00;B82Y40/00;H01L29/06;H01L21/8238;H01L27/092 主分类号 H01L29/04
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A semiconductor structure, comprising: a first semiconductor device comprising a first nanowire disposed above a crystalline substrate, the first nanowire comprising a semiconductor material having a first global crystal orientation; a second semiconductor device comprising a second nanowire disposed above the crystalline substrate, the second nanowire comprising a semiconductor material having a second global crystal orientation different from the first global crystal orientation, and the second nanowire isolated from the crystalline substrate by an isolation pedestal disposed between the second nanowire and the crystalline substrate; and a third semiconductor device comprising a third nanowire disposed above the crystalline substrate, the third nanowire comprising a semiconductor material having a third global crystal orientation different from the first and second global crystal orientations, the third nanowire isolated from the crystalline substrate by a second isolation pedestal disposed between the third nanowire and the crystalline substrate, wherein a bottom surface of the first nanowire is co-planar with a bottom surface of the second nanowire and is co-planar with a bottom surface of the third nanowire, and wherein the first nanowire, the second nanowire and the third nanowire are all parallel with one another.
地址 Santa Clara CA US