发明名称 |
Thermoelectric power module |
摘要 |
A thermoelectric power module capable of withstanding a long time use in a high temperature environment where a temperature (Th) of a higher temperature portion exceeds 250° C. The thermoelectric power module includes: a thermoelectric power element; a first diffusion prevention layer consisting of molybdenum (Mo) and disposed on a surface of the thermoelectric power element; a second diffusion prevention layer consisting of an intermetallic compound of nickel-tin (Ni—Sn) and disposed on a surface of the first diffusion prevention layer opposite to the thermoelectric power element side; an electrode; a third diffusion prevention layer consisting of an intermetallic compound of nickel-tin (Ni—Sn) and disposed on a surface of the electrode; a solder layer containing lead (Pb) at not less than 85% and configured to join the second diffusion prevention layer and the third diffusion prevention layer to each other. |
申请公布号 |
US9559281(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201113579382 |
申请日期 |
2011.02.14 |
申请人 |
KOMATSU LTD. |
发明人 |
Kajihara Takeshi;Ishida Kouichi;Fujimoto Shinichi;Mizukami Hiroyuki |
分类号 |
H01L35/30;H01L35/28;H01L35/08;H01L35/00;H01L35/32 |
主分类号 |
H01L35/30 |
代理机构 |
Wenderoth, Lind & Ponack, L.L.P. |
代理人 |
Wenderoth, Lind & Ponack, L.L.P. |
主权项 |
1. A thermoelectric power module comprising:
a thermoelectric power element; a first diffusion prevention layer consisting essentially of molybdenum (Mo) and disposed on a surface of said thermoelectric power element; a second diffusion prevention layer consisting essentially of an intermetallic compound of nickel-tin Ni—Sn selected from the group consisting of Ni3Sn having enthalpy of formation of −24.9 kJ/mol Ni3Sn having enthalpy of formation of −34.6 kJ/mol and Ni3Sn4 having enthalpy of formation of −24.0 kJ/mol when the intermetallic compound is produced from nickel, said second diffusion prevention layer being disposed on a surface of said first diffusion prevention layer opposite to said thermoelectric power element side; an electrode formed of copper (Cu); a third diffusion prevention layer consisting essentially of the intermetallic compound of nickel-tin (Ni—Sn) and disposed on a surface of said electrode so as to surround said electrode; and a solder layer containing lead (Pb) at not less than 85% and configured to join said second diffusion prevention layer and said third diffusion prevention layer to each other. |
地址 |
Tokyo JP |