| 发明名称 |
Ink composition for manufacturing light absorption layer including metal nano particles and method of manufacturing thin film using the same |
| 摘要 |
Disclosed are an ink composition for manufacturing a light absorption layer including metal nano particles and a method of manufacturing a thin film using the same, more particularly, an ink composition for manufacturing a light absorption layer including copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal particles including S or Se dispersed in a solvent and a method of manufacturing a thin film using the same. |
| 申请公布号 |
US9559243(B2) |
申请公布日期 |
2017.01.31 |
| 申请号 |
US201514590947 |
申请日期 |
2015.01.06 |
| 申请人 |
LG CHEM, LTD. |
发明人 |
Yoon Seokhee;Yoon Seokhyun;Yoon Taehun |
| 分类号 |
H01B1/02;H01B1/22;B82Y30/00;B82Y40/00;H01L31/18;B22F9/24;C01B19/00;C01G15/00;C08K3/10;C09D11/52;C09D101/28;C09D129/04;C09D139/06;C22C9/00;C22C28/00;H01L31/032 |
主分类号 |
H01B1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An ink composition for manufacturing a light absorption layer comprising:
a solvent consisting of a mixture of alcohol-based solvents; nano particles dispersed in the solvent, wherein the only nano particles present in the ink composition consist of:
1) Cu2In bimetallic metal nano particles and In2S3 nano particles;2) Cu2In bimetallic metal nano particles, In2S3 nano particles, and Ga2Se3 nano particles;3) Cu2In bimetallic metal nano particles and InGaS3 nano particles; or4) Cu2In bimetallic metal nano particles and In2Se3 nano particles, and wherein a ratio of Cu to (In+Ga) in the ink composition is between 0.5 and 1.5. |
| 地址 |
Seoul KR |
