发明名称 Solar cell with doped groove regions separated by ridges
摘要 Solar cells with doped groove regions separated by ridges and methods of fabricating solar cells are described. In an example, a solar cell includes a substrate having a surface with a plurality of grooves and ridges. A first doped region of a first conductivity type is disposed in a first of the grooves. A second doped region of a second conductivity type, opposite the first conductivity type, is disposed in a second of the grooves. The first and second grooves are separated by one of the ridges.
申请公布号 US9559228(B2) 申请公布日期 2017.01.31
申请号 US201113250988 申请日期 2011.09.30
申请人 SunPower Corporation 发明人 Molesa Steven Edward;Pass Thomas;Kraft Steve
分类号 H01L31/00;H01L31/0236;H01L31/0224;H01L31/0352;H01L31/068;H01L31/18 主分类号 H01L31/00
代理机构 Blakely Sokoloff Taylor Zafman LLP 代理人 Blakely Sokoloff Taylor Zafman LLP
主权项 1. A solar cell, comprising: a substrate having a surface with a plurality of grooves and a plurality of ridges, each of the plurality of grooves having a bottommost surface with a plane parallel with a plane of an uppermost surface of each of the plurality of ridges, wherein the bottommost surface of each of the plurality of grooves is smooth, and wherein the substrate has an undoped or lightly doped region; a first doped region of the substrate having a concentration of dopants higher than the undoped or lightly doped region of the substrate, the first doped region of a first conductivity type and disposed below the bottommost surface of a first groove of the plurality of grooves; and a second doped region of the substrate having a concentration of dopants higher than the undoped or lightly doped region of the substrate, the second doped region of a second conductivity type, opposite the first conductivity type, and disposed below the bottommost surface of a second groove of the plurality of grooves, the first and second grooves separated by one of the plurality of ridges, wherein the first doped region of the substrate extends continuously between the one of the plurality of ridges and a directly adjacent second of the plurality of ridges and is contiguous with the second doped region of the substrate, wherein the first doped region of the substrate only includes dopants of the first conductivity type, wherein the second doped region of the substrate extends by an amount into the one of the plurality of ridges and wherein the one of the plurality of ridges is entirely filled with the first doped region and the second doped region.
地址 San Jose CA US