Semiconductor component with dynamic behavior

摘要

One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches.

主权项

1. A semiconductor component comprising:
a semiconductor body; a drift zone, a body zone, a source zone and a drain zone in the semiconductor body, wherein, in a vertical direction of the semiconductor body, the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone; a gate electrode dielectrically insulated from the body zone by a gate dielectric layer; at least two trenches extending from a first side of the semiconductor body in the vertical direction into the semiconductor body, wherein the at least two trenches are arranged at a distance from one another in a lateral direction of the semiconductor body; a field electrode arranged adjacent to the drift zone in the at least two trenches, wherein the field electrode is connected to the source zone; and a field dielectric layer dielectrically insulating the field electrode from the drift zone and being thicker than the gate dielectric layer, wherein the at least two trenches are arranged at a distance from the drain zone in the vertical direction; wherein the distance between the trenches and the drain zone in the vertical direction is greater than 1.5 times the distance between the at least two trenches in the lateral direction, wherein a doping concentration of a drift zone section arranged in the vertical direction between the at least two trenches and the drain zone differs by at most 35% from a minimum doping concentration of a drift zone section arranged in the lateral direction between the trenches.