Spintronic logic element

摘要

An embodiment includes a C-element logic gate implemented as a spin logic device that provides a compact and low-power implementation of asynchronous logic by implementing a C-element with spintronic technology. An embodiment includes a first nanopillar including a first contact and a first fixed magnetic layer; a second nanopillar including a second contact and a second fixed magnetic layer; and a third nanopillar including a third contact, a tunnel barrier, and a third fixed magnetic layer; wherein (a) the first, second, and third nanopillars are all formed over a free magnetic layer, and (b) the third fixed magnetic layer, the tunnel barrier, and the free magnetic layer form a magnetic tunnel junction (MTJ). Other embodiments are described herein.

主权项

1. A C-element comprising:
a first nanopillar including a first fixed magnetic layer and coupled to a first contact; a second nanopillar including a second fixed magnetic layer and coupled to a second contact; and a third nanopillar including a third fixed magnetic layer and coupled to a third contact; wherein (a) the first, second, and third nanopillars are included in the C-element and are all formed over a common free magnetic layer, and (b) the third fixed magnetic layer and the free magnetic layer form a magnetic tunnel junction (MTJ).