发明名称 Light-emitting device and method of producing the same
摘要 A light-emitting device can prevent light from leaking through an unwanted area (or an unintended area) and can improve color unevenness and brightness unevenness. A method of producing such a light-emitting device, can include: disposing a plurality of light-emitting elements on a surface of a supporting substrate; forming a reflecting layer on the respective light-emitting elements along peripheries of the light-emitting elements facing an area between the light-emitting elements; forming a wavelength conversion layer so as to embed the plurality of light-emitting elements therein on the supporting substrate; and irradiating the wavelength conversion layer with laser beams to remove the wavelength conversion layer disposed at the area between the light-emitting elements.
申请公布号 US9559270(B2) 申请公布日期 2017.01.31
申请号 US201514682680 申请日期 2015.04.09
申请人 STANLEY ELECTRIC CO., LTD. 发明人 Saito Tatsuma;Tanaka Satoshi
分类号 H01L33/50;H01L33/60;H01L51/52;H01L33/46;H01L25/075;H01L33/58;H01L27/15;H01L33/00 主分类号 H01L33/50
代理机构 Holtz, Holtz & Volek PC 代理人 Holtz, Holtz & Volek PC
主权项 1. A method of producing a light-emitting device, the method comprising: disposing a plurality of light-emitting elements on a surface of a supporting substrate, each of the light-emitting elements including a second semiconductor layer, a light-emitting layer, and a first semiconductor layer in this order from a side of the supporting substrate, and further including a hole portion formed to protrude in the first semiconductor layer; forming a reflecting layer on a surface of the first semiconductor layer of each of the respective light-emitting elements along peripheries of the light-emitting elements facing an area between the light-emitting elements; forming a wavelength conversion layer so as to embed the plurality of light-emitting elements therein on the supporting substrate; and irradiating the wavelength conversion layer with laser beams to remove the wavelength conversion layer disposed at the area between the light-emitting elements, wherein the supporting substrate includes a first electrode configured to be electrically connected to the first semiconductor layer via the hole portion and a second electrode configured to be electrically connected to the second semiconductor layer.
地址 Tokyo JP
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