发明名称 |
Light-emitting device and method of producing the same |
摘要 |
A light-emitting device can prevent light from leaking through an unwanted area (or an unintended area) and can improve color unevenness and brightness unevenness. A method of producing such a light-emitting device, can include: disposing a plurality of light-emitting elements on a surface of a supporting substrate; forming a reflecting layer on the respective light-emitting elements along peripheries of the light-emitting elements facing an area between the light-emitting elements; forming a wavelength conversion layer so as to embed the plurality of light-emitting elements therein on the supporting substrate; and irradiating the wavelength conversion layer with laser beams to remove the wavelength conversion layer disposed at the area between the light-emitting elements. |
申请公布号 |
US9559270(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201514682680 |
申请日期 |
2015.04.09 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
Saito Tatsuma;Tanaka Satoshi |
分类号 |
H01L33/50;H01L33/60;H01L51/52;H01L33/46;H01L25/075;H01L33/58;H01L27/15;H01L33/00 |
主分类号 |
H01L33/50 |
代理机构 |
Holtz, Holtz & Volek PC |
代理人 |
Holtz, Holtz & Volek PC |
主权项 |
1. A method of producing a light-emitting device, the method comprising:
disposing a plurality of light-emitting elements on a surface of a supporting substrate, each of the light-emitting elements including a second semiconductor layer, a light-emitting layer, and a first semiconductor layer in this order from a side of the supporting substrate, and further including a hole portion formed to protrude in the first semiconductor layer; forming a reflecting layer on a surface of the first semiconductor layer of each of the respective light-emitting elements along peripheries of the light-emitting elements facing an area between the light-emitting elements; forming a wavelength conversion layer so as to embed the plurality of light-emitting elements therein on the supporting substrate; and irradiating the wavelength conversion layer with laser beams to remove the wavelength conversion layer disposed at the area between the light-emitting elements, wherein the supporting substrate includes a first electrode configured to be electrically connected to the first semiconductor layer via the hole portion and a second electrode configured to be electrically connected to the second semiconductor layer. |
地址 |
Tokyo JP |