Semiconductor device, integrated circuit structure using the same, and manufacturing method thereof

摘要

A semiconductor device includes a substrate, a semiconductor structure, a metal pad, and a stress releasing material. The semiconductor structure is disposed on the substrate. The metal pad is disposed on the semiconductor structure. The metal pad includes a through hole therein. The stress releasing material is disposed in the through hole.

主权项

1. A semiconductor device comprising:
a substrate; a semiconductor structure disposed on the substrate; a metal pad disposed on the semiconductor structure, wherein the metal pad includes a through hole therein; a stress releasing material disposed in the through hole; a polymer layer disposed on the semiconductor structure and covering a portion of the metal pad and the stress releasing material, the polymer layer having a first opening to expose another portion of the metal pad; and a conductive layer present on a top surface of the polymer layer and electrically connected to the exposed portion of the metal pad through the first opening.