Method for filling trench with metal layer and semiconductor structure formed by using the same

摘要

A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer. The present invention further provides a semiconductor device having an aluminum layer with a reflectivity greater than 1, wherein the semiconductor device is formed by using the method.

主权项

1. A method for filling a trench with a metal layer, comprising:
providing a deposition apparatus, wherein the deposition apparatus comprises a heater; providing a substrate and a dielectric layer disposed thereon, wherein the dielectric layer includes a trench; performing a first deposition process to fill the trench with a metal layer, wherein a temperature of the substrate is ramped up from 15 degrees Celsius to 30 degrees Celsius to a predetermined temperature in the first deposition process, the predetermined temperature is between 380 degrees Celsius and 420 degrees Celsius and during the first deposition process, no heat transferring gas is supplied by the heater; and performing a second deposition process when the temperature of the substrate reaches the predetermined temperature, so as to completely fill the trench with the metal layer, wherein the heater has the predetermined temperature and a heat transferring gas is supplied by the heater.