发明名称 |
Pattern structures in semiconductor devices and methods of forming pattern structures in semiconductor devices |
摘要 |
A pattern structure in a semiconductor device includes an extending line and a pad connected with an end portion of the extending line. The pad may have a width that is larger than a width of the extending line. The pad includes a protruding portion extending from a lateral portion of the pad. The pattern structure may be formed by simplified processes and may be employed in various semiconductor devices requiring minute patterns and pads. |
申请公布号 |
US9558993(B2) |
申请公布日期 |
2017.01.31 |
申请号 |
US201314072882 |
申请日期 |
2013.11.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Sim Jaehwang;Min Jaeho;Lee Jaehan;Kim Keonsoo |
分类号 |
H01L21/033;H01L21/311;H01L21/768;H01L21/3213;H01L21/308;H01L23/528;H01L27/115 |
主分类号 |
H01L21/033 |
代理机构 |
Muir Patent Law, PLLC |
代理人 |
Muir Patent Law, PLLC |
主权项 |
1. A method for forming a pattern structure in a semiconductor device, comprising:
forming a layer to be etched, on a substrate; forming a sacrificial pattern structure on a predetermined portion of the layer to be etched; forming a spacer formation layer on the sacrificial pattern structure and the layer to be etched; forming a photoresist pattern partially exposing the spacer forming layer and the sacrificial pattern structure; etching the spacer formation layer the sacrificial pattern structure using the photoresist pattern as an etch mask to form a first opening; removing a lower portion of the sacrificial pattern structure, the lower portion being exposed by a sidewall of the first opening; partially removing the spacer formation layer and the sacrificial pattern structure to form an etching mask structure; and etching the layer to be etched using the etching mask structure to form a pattern structure. |
地址 |
Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR |