| 发明名称 | System and method for gas-phase sulfur passivation of a semiconductor surface | ||
| 摘要 | Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface. | ||
| 申请公布号 | US9558931(B2) | 申请公布日期 | 2017.01.31 |
| 申请号 | US201313941216 | 申请日期 | 2013.07.12 |
| 申请人 | ASM IP Holding B.V. | 发明人 | Tang Fu;Givens Michael Eugene;Xie Qi;Raisanen Petri |
| 分类号 | H01L21/02;H01L23/02;H01L21/67;H01L23/31;H01L23/29;H01L21/306 | 主分类号 | H01L21/02 |
| 代理机构 | Snell & Wilmer L.L.P. | 代理人 | Snell & Wilmer L.L.P. |
| 主权项 | 1. A method of passivating a surface of a semiconductor, the method comprising the steps of: providing the surface of the semiconductor to a reaction chamber of a reactor; exposing the surface of the semiconductor to a gas-phase sulfur precursor selected from the group consisting of H2S, NH4HS, and organosulfur compounds in the reaction chamber; and passivating the surface of the semiconductor in the reaction chamber using the gas-phase sulfur precursor to form a passivated semiconductor surface, wherein a pressure within the reaction chamber during the step of passivating is between 0.5 Torr and 750 Torr. | ||
| 地址 | Almere NL | ||