发明名称 Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy
摘要 A semiconductor device comprises a carrier including an adhesive disposed over the carrier. The semiconductor device further comprises a semiconductor wafer including a plurality of semiconductor die separated by a non-active region. A plurality of bumps is formed over the semiconductor die. The semiconductor wafer is mounted to the carrier with the adhesive disposed around the plurality of bumps. Irradiated energy is applied to the non-active region to form a modified region within the non-active region. The semiconductor wafer is singulated along the modified region to separate the semiconductor die. The semiconductor wafer is singulated along the modified region by applying stress to the semiconductor wafer. The adhesive is removed from around the plurality of bumps after singulating the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor die comprising through silicon vias. The modified region optionally includes a plurality of vertically stacked modified regions.
申请公布号 US9559004(B2) 申请公布日期 2017.01.31
申请号 US201213469754 申请日期 2012.05.11
申请人 STATS ChipPAC Pte. Ltd. 发明人 Han Byung Joon;Shim Il Kwon;Choi Won Kyoung
分类号 H01L23/48;H01L23/52;H01L29/40;H01L21/78;H01L21/683;H01L23/00 主分类号 H01L23/48
代理机构 Patent Law Group: Atkins and Associates, P.C. 代理人 Atkins Robert D.;Patent Law Group: Atkins and Associates, P.C.
主权项 1. A method of making a semiconductor device, comprising: providing a carrier including an adhesive disposed over the carrier; providing a semiconductor wafer including a plurality of semiconductor die separated by a non-active region; forming a plurality of bumps over the semiconductor die; disposing the semiconductor wafer over the carrier to embed the bumps in the adhesive with the adhesive extending to the semiconductor wafer; applying irradiated energy to the non-active region to form a modified region within the non-active region; singulating the semiconductor wafer along the modified region by, disposing a heating element over a first surface of the semiconductor wafer, anddisposing a cooling element over a second surface of the semiconductor wafer opposite the first surface; removing the bumps from the adhesive after singulating the semiconductor wafer; and depositing an encapsulant over the plurality of semiconductor die after removing the bumps from the adhesive.
地址 Singapore SG