Methods of forming an improved via to contact interface by selective formation of a conductive capping layer

摘要

One illustrative method disclosed herein includes, among other things, forming an opening in a layer of insulating material so as to thereby expose at least a portion of a conductive contact, performing a selective deposition process to selectively form a layer of conductive material in the opening and on the conductive contact, performing an anneal process, depositing at least one conductive material above the selectively formed conductive material layer so as to over-fill the opening, and performing at least one planarization process so as to remove excess materials to thereby define a conductive via that is positioned in the opening and conductively coupled to the conductive contact.

主权项

1. A method, comprising:
forming an opening in at least one layer of insulating material positioned above a metal contact that is conductively coupled to a transistor device so as to thereby expose at least a portion of said metal contact; performing a selective deposition process to selectively form a metal layer in said opening and on said metal contact, wherein said metal layer is not formed on a substantial portion of sidewalls of said opening during said selective deposition process; after selectively forming said metal layer on said metal contact, performing at least one anneal process to cause movement of a material of said metal layer; after performing said at least one anneal process, depositing at least one conductive material above said selectively formed metal layer so as to over-fill said opening; and performing at least one planarization process so as to remove excess materials positioned outside of said opening and thereby define a conductive via that is positioned in said opening and conductively coupled to said metal contact.