Solid-state imaging apparatus and electronic apparatus

摘要

A solid-state imaging apparatus includes a phase difference detection pixel including a photoelectric conversion section that is formed on a semiconductor substrate and configured to photoelectrically convert incident light, a waveguide configured to guide the incident light to the photoelectric conversion section, and a light-shielding section that is formed in vicinity of an opening of the waveguide and configured to shield a part of the incident light that enters the waveguide.

主权项

1. A solid-state imaging apparatus comprising: an on-chip lens that receives incident light, a first portion of the incident light and a second portion of the incident light are transmitted through the on-chip lens; a waveguide that guides the first portion of the incident light onto a photoelectric conversion section of a semiconductor substrate, the waveguide is between the semiconductor substrate and the on-chip lens; a light-shielding section that prevents the second portion of the incident light from reaching the waveguide, a portion of the light-shielding section is between the waveguide and the on-chip lens; a different waveguide that guides the incident light onto a different photoelectric conversion section of the semiconductor substrate, the different waveguide is between the semiconductor substrate and a different on-chip lens, wherein no light-shielding section is between the different waveguide and the different on-chip lens and wherein no light-shielding section is between the different waveguide and the different on-chip lens and wherein the different photoelectric conversion section is adjacent to the photoelectric conversion section.