Predicting and controlling critical dimension issues and pattern defectivity in wafers using interferometry

摘要

Systems and methods for predicting and controlling pattern quality data (e.g., critical dimension and/or pattern defectivity) in patterned wafers using patterned wafer geometry (PWG) measurements are disclosed. Correlations between PWG measurements and pattern quality data measurements may be established, and the established correlations may be utilized to provide pattern quality data predictions for a given wafer based on geometry measurements obtained for the give wafer. The predictions produced may be provided to a lithography tool, which may utilize the predictions to correct focus and/or title errors that may occur during the lithography process.

主权项

1. A method, comprising:
obtaining pattern quality data for at least one reference wafer; generating at least one pattern quality binary map for the at least one reference wafer; obtaining patterned wafer geometry data for the at least one reference wafer; generating at least one patterned wafer geometry binary map for the at least one reference wafer based on at least one threshold; selecting a threshold among the at least one threshold, the selected threshold providing a best matching between the at least one patterned wafer geometry binary map and the at least one pattern quality binary map; and providing a pattern quality data prediction for a new wafer based on the selected threshold.