| 发明名称 |
NITRIDE SEMICONDUCTOR ELEMENT |
| 摘要 |
According to one embodiment, a nitride semiconductor element includes a p-type semiconductor layer and a p-side electrode. The p-type semiconductor layer includes a nitride semiconductor, and has a first surface. The p-side electrode contacts the first surface. The first surface is a semi-polar plane. The first surface includes a plurality of protrusions. A height of the protrusions along a first direction is not less than 1 nanometer and not more than 5 nanometers. The first direction is from the p-type semiconductor layer toward the p-side electrode. A density of the protrusions in the first surface is more than 1.0×1010/cm2 and not more than 6.1×1010/cm2. |
| 申请公布号 |
US2017025578(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615053266 |
申请日期 |
2016.02.25 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
HIKOSAKA Toshiki;Yoshida Hisashi;Uesugi Kenjiro;Ono Hiroshi;Nunoue Shinya |
| 分类号 |
H01L33/32;H01L33/38;H01L33/22;H01L33/18;H01L33/24 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nitride semiconductor element, comprising:
a p-type semiconductor layer including a nitride semiconductor, the p-type semiconductor layer having a first surface; and a p-side electrode contacting the first surface, the first surface being a semi-polar plane, the first surface including a plurality of protrusions, a height of the protrusions along a first direction being not less than 1 nanometer and not more than 5 nanometers, the first direction being from the p-type semiconductor layer toward the p-side electrode, a density of the protrusions in the first surface being more than 1.0×1010/cm2 and not more than 6.1×1010/cm2. |
| 地址 |
Minato-ku JP |
