CONTROL OF P-CONTACT RESISTANCE IN A SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A surface of the p-type region perpendicular to a growth direction of the semiconductor structure includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact formed on the p-type region. The p-contact includes a reflector and a blocking material. The blocking material is disposed over the first portion and no blocking material is disposed over the second portion.

主权项

1. A method comprising:
partially activating the p-type region in a III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region; after partially activating the p-type region, forming a metal p-contact on the p-type region, the metal p-contact comprising:
a first metal, wherein the first metal is reflective; anda second metal; and after forming the metal p-contact, further activating the p-type region.