NANO-RIBBON CHANNEL TRANSISTOR WITH BACK-BIAS CONTROL

摘要

Embodiments of the invention include a method for fabricating a nano-ribbon transistor device and the resulting structure. A nano-ribbon transistor device including a substrate, a nano-ribbon channel, a core region in the center of the nano-ribbon channel, a gate formed around the nano-ribbon channel, a spacer formed on each sidewall of the gate, and a source and drain region epitaxially formed adjacent to each spacer is provided. The core region in the center of the nano-ribbon channel is selectively etched. A dielectric material is deposited on the exposed portions of the nano-ribbon channel. A back-bias control region is formed on the dielectric material within the core of the nano-ribbon channel and on the substrate adjacent to the nano-ribbon transistor device. A metal contact is formed in the back-bias control region.

主权项

1. A method for forming a semiconductor device, the method comprising:
providing a nano-ribbon transistor device comprising:
a substrate;a nano-ribbon channel formed above the substrate;a core region formed within the center of the nano-ribbon channel, wherein the core region has etch selectivity to the nano-ribbon channel;a gate formed around the nano-ribbon channel;one or more spacers formed laterally on at least one sidewall of the gate; anda source/drain region epitaxially formed circumferentially around the nano-ribbon channel adjacent to each spacer of the one or more spacers; selectively etching the core region of the nano-ribbon channel; depositing a dielectric material on exposed portions of the nano-ribbon channel; forming a back-bias control region on at least exposed portions of the dielectric material within the core of the nano-ribbon channel; and forming a metal contact in the back-bias control region.