发明名称 |
MANUFACTURING METHOD OF SOLAR CELL AND SOLAR CELL |
摘要 |
When a high-concentration diffusion layer is formed in part of a first surface of a substrate in which a diffusion layer of the light receiving surface is formed, the thermal oxidation is performed in a state where a diffusion source is formed, thereby introducing the impurity in the outermost surface of the diffusion layer of the light receiving surface into a thermal oxide film. Consequently, the outermost surface of the diffusion layer of the light receiving surface has an impurity concentration lower than that on the inner side. |
申请公布号 |
US2017025561(A1) |
申请公布日期 |
2017.01.26 |
申请号 |
US201415301653 |
申请日期 |
2014.04.04 |
申请人 |
Mitsubishi Electric Corporation |
发明人 |
KOHATA Hayato |
分类号 |
H01L31/068;H01L31/18;H01L31/0224 |
主分类号 |
H01L31/068 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of a solar cell comprising:
a step of preparing a first-conductivity-type semiconductor substrate that includes a first surface constituting a light receiving surface and a second surface opposed to the first surface; a first diffusion step of forming a second-conductivity-type diffusion layer in the first surface; a second step of forming a film that includes a second-conductivity-type diffusion source on part of the first surface of the semiconductor substrate in which the second-conductivity-type diffusion layer is formed; a third step of forming a high-concentration diffusion layer by diffusion from the diffusion source and forming an oxide film, by performing a heat treatment in an oxidizing atmosphere on the semiconductor substrate on which the diffusion source is formed; a step of forming a first electrode on the high-concentration diffusion layer; and a step of forming a second electrode on the second surface. |
地址 |
Tokyo JP |