| 发明名称 |
Nanowire Field Effect Transistor Device Having a Replacement Gate |
| 摘要 |
A device includes a substrate, a buffer layer, a nanowire, a gate structure, and a remnant of a sacrificial layer. The buffer layer is above the substrate. The nanowire is above the buffer layer and includes a pair of source/drain regions and a channel region between the source/drain regions. The gate structure surrounds the channel region. The remnant of the sacrificial layer is between the buffer layer and the nanowire and includes a group III-V semiconductor material. |
| 申请公布号 |
US2017025538(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615286679 |
申请日期 |
2016.10.06 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Oxland Richard Kenneth |
| 分类号 |
H01L29/78;H01L29/423;H01L29/20;H01L29/16;H01L29/66;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a substrate; a buffer layer above the substrate; a nanowire above the buffer layer and including a pair of source/drain regions and a channel region between the source/drain regions; a gate structure surrounding the channel region; and a remnant of a sacrificial layer between the buffer layer and the nanowire and including a group III-V semiconductor material. |
| 地址 |
Hsinchu TW |
