发明名称 VCSEL STRUCTURE WITH EMBEDDED HEAT SINK
摘要 An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.
申请公布号 US2017025815(A1) 申请公布日期 2017.01.26
申请号 US201615011562 申请日期 2016.01.31
申请人 APPLE INC. 发明人 Jiang Tongbi T.;Li Weiping;Fan Xiaofeng
分类号 H01S5/024;H01S5/42;H01S5/042;H01S5/183 主分类号 H01S5/024
代理机构 代理人
主权项 1. An optoelectronic device, comprising: a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side; at least one optoelectronic emitter formed on the front side of the semiconductor substrate in proximity with the at least one cavity; and a heat-conducting material at least partially filling the at least one cavity and configured to serve as a heat sink for the at least one optoelectronic emitter.
地址 Cupertino CA US