SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a semiconductor memory device includes a substrate; a stacked body including a plurality of electrode layers; a select gate; a first insulating film; and a semiconductor film provided in the stacked body and in the substrate. The select gate includes a first portion provided on the substrate and spreading on a first plane crossing a stacking direction of the stacked body, and a second portion provided in the substrate and provided integrally with the first portion. The first insulating film is provided between the select gate and the substrate.

主权项

1. A semiconductor memory device comprising:
a substrate; a stacked body provided on the substrate and including a plurality of electrode layers separately stacked each other; a select gate provided between the substrate and the stacked body, the select gate including
a first portion provided on the substrate and spreading on a first plane crossing a stacking direction of the stacked body, anda second portion provided in the substrate and provided integrally with the first portion; a first insulating film provided between the select gate and the substrate; and a semiconductor film provided in the stacked body and in the substrate, the semiconductor film extending in the stacking direction.