SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF MANUFACTURE

摘要

An integrated FinFET and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench capacitor in a silicon on insulator (SOI) substrate. The method further includes simultaneously forming polysilicon fins from material of the at least one deep trench capacitor and SOI fins from the SOI substrate. The method further includes forming an insulator layer on the polysilicon fins. The method further includes forming gate structures over the SOI fins and the insulator layer on the polysilicon fins.

主权项

1. A structure, comprising:
a plurality of deep trench capacitors formed in a silicon on insulator (SOI) substrate, each of the plurality of deep trench capacitors having a fin structure; a plurality of SOI fins each of which having ends in contact with respective fin structures of the deep trench capacitors; an insulator material on the fin structures of the plurality of deep trench capacitors; a gate structure extending over the insulator material and the SOI fins; and an epitaxial material on ends of the SOI fins and ends of the fin structures of the deep trench capacitors to provide a connection between the SOI fins and the fin structures of the deep trench capacitors, wherein each of the SOI fins are between the fin structures of the deep trench capacitors such that the ends of the SOI fins contact the ends of the fin structures of the deep trench capacitors.