发明名称 WEARABLE DEVICES INCORPORATING ION SELECTIVE FIELD EFFECT TRANSISTORS
摘要 Techniques for measuring ion related metrics at a user's skin surface are disclosed. In one aspect, a method for operating a wearable device may involve determining, based on output of one or more ion selective field effect transistor sensors, various physiological conditions such as a state of hydration, a state of skin health, or the cleanliness of the wearable device or an associated garment.
申请公布号 US2017023519(A1) 申请公布日期 2017.01.26
申请号 US201615282976 申请日期 2016.09.30
申请人 Fitbit, Inc. 发明人 Rowe Aaron Alexander;Elliot Thomas Samuel;Prieto Javier L.
分类号 G01N27/414;H01L29/45;H01L23/02;A61B5/00;A41C3/00;A61B5/01;A61B5/145;A61B5/1477;G01N27/416;H01L23/34 主分类号 G01N27/414
代理机构 代理人
主权项 1. A wearable device for monitoring skin health, comprising: an ion selective field effect transistor; and a reference electrode, wherein the ion selective field effect transistor and the reference electrode are configured to be in direct contact with a user's skin.
地址 San Francisco CA US