| 主权项 |
1. An amplifier arrangement comprising:
a printed circuit board including:
an RF input terminal;an RF output terminal;a packaged amplifier mounted thereon, said packaged amplifier having a first RF input lead, a second RF input lead, a first RF output lead, and a second RF output lead, and comprising an amplifier assembly;a splitter element connected to the RF input terminal and configured to split an RF input signal received at the RF input terminal into at least two component parts and provide those parts to the first RF input lead and second RF input lead, respectively, of the packaged amplifier;a Doherty combining element configured to combine the output signals received from the first RF output lead and the second RF output lead of the packaged amplifier and provide the combined signal to the RF output terminal; andan impedance invertor element arranged adjacent to said Doherty combining element; wherein the amplifier assembly comprises:
a dual path package having said first RF input lead, said second RF input lead, said first RF output lead, and said second RF output lead;a three or more way Doherty amplifier arrangement having at least three amplifiers, the at least three amplifiers including a main amplifier and at least two peak amplifiers;the Doherty amplifier arrangement mounted within the dual path package, wherein the first RF input lead and the second RF input lead are configured to receive the component parts of the split RF input signal and to provide the component parts to the Doherty amplifier arrangement, and wherein the first RF output lead and the second RF output lead are configured to receive the split output signal from the Doherty amplifier arrangement and to provide for connection to further components;the Doherty amplifier arrangement comprising a first semiconductor die and a second semiconductor die, the first semiconductor die having thereon two of the at least three amplifiers and the second semiconductor die having thereon up to two of the remaining amplifier or amplifiers of the at least three amplifiers; wherein the first semiconductor die includes a Doherty splitter element configured to split the RF input signal received from the first RF input lead to provide an input signal to the two amplifiers thereon and a Doherty combiner element to combine an output signal from the two amplifiers thereon, the Doherty combiner element connected to the first RF output lead; wherein the amplifier or amplifiers of the second semiconductor die are connected to the second RF input lead to provide an input signal to the amplifier or amplifiers and to the second RF output lead to receive an output signal from the amplifier or amplifiers of the second semiconductor die; and wherein the splitter element, the Doherty combining element, and the impedance invertor are mounted on the printed circuit board external of the packaged amplifier. |
