CAPACITOR STRUCTURES AND METHODS OF FORMING THE SAME, AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

摘要

A capacitor structure includes a plurality of lower electrodes, a support pattern structure, a dielectric layer, and an upper electrode. The lower electrodes are formed on a substrate. The support pattern structure is formed between the lower electrodes, and includes a lower support pattern and an upper support pattern structure over the lower support pattern. The upper support pattern structure includes a plurality of upper support patterns spaced apart from each other in a direction substantially perpendicular to a top surface of the substrate. The dielectric layer is formed on the lower electrodes and the support pattern structure. The upper electrode is formed on the dielectric layer. A sum of thicknesses of the plurality of upper support patterns in the direction substantially perpendicular to the top surface of the substrate is about 35% to about 85% of a total thickness of the upper support pattern structure.

主权项

1. A capacitor structure, comprising:
a plurality of lower electrodes on a substrate; a support pattern structure between the lower electrodes, the support pattern structure including:
a lower support pattern; andan upper support pattern structure over the lower support pattern, the upper support pattern structure including a plurality of upper support patterns spaced apart from each other in a direction substantially perpendicular to a top surface of the substrate; a dielectric layer on the lower electrodes and the support pattern structure; and an upper electrode on the dielectric layer, wherein a sum of thicknesses of the plurality of upper support patterns in the direction substantially perpendicular to the top surface of the substrate is about 35% to about 85% of a total thickness of the upper support pattern structure.