发明名称 TWO-DIMENSIONAL MATERIAL HARD MASK, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MATERIAL LAYER PATTERN USING THE HARD MASK
摘要 A 2D material hard mask includes hydrogen, oxygen, and a 2D material layer having a layered crystalline structure. The 2D material layer may be a material layer including one of a carbon structure (for example, a graphene sheet) and a non-carbon structure.
申请公布号 US2017025273(A1) 申请公布日期 2017.01.26
申请号 US201514984189 申请日期 2015.12.30
申请人 Samsung Electronics Co., Ltd. 发明人 SHIN Keunwook;SEOL Minsu;SHIN Hyeonjin;KIM Sangwon;PARK Seongjun
分类号 H01L21/033;H01L21/027;H01L21/311;H01L21/3215;H01L21/02 主分类号 H01L21/033
代理机构 代理人
主权项 1. A hard mask comprising hydrogen, oxygen and a two-dimensional (2D) material layer having a layered crystalline structure.
地址 Suwon-si KR