OXIDE SINTERED BODY AND METHOD FOR MANUFACTURING THE SAME, SPUTTERING TARGET, AND SEMICONDUCTOR DEVICE

摘要

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

主权项

1. An oxide sintered body comprising indium, tungsten and zinc, wherein
said oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc in said oxide sintered body is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc in said oxide sintered body is higher than 1.2 atomic % and lower than 30 atomic %.