| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A semiconductor device and a method of fabricating the same, the semiconductor device includes a plurality of fin shaped structures, a trench, a spacing layer and a dummy gate structure. The fin shaped structures are disposed on a substrate. The trench is disposed between the fin shaped structures. The spacing layer is disposed on sidewalls of the trench, wherein the spacing layer has a top surface lower than a top surface of the fin shaped structures. The dummy gate structure is disposed on the fin shaped structures and across the trench. |
| 申请公布号 |
US2017025540(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201514841628 |
申请日期 |
2015.08.31 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Liou En-Chiuan;Weng Tang-Chun;Chen Chien-Hao |
| 分类号 |
H01L29/78;H01L29/06;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a plurality of fin shaped structures disposed on a substrate; a trench disposed between the fin shaped structures; a spacing layer disposed on sidewalls of the trench, wherein a top surface and a bottom surface of the sidewalls are uncovered by the spacing layer and two opposite sidewalls of the spacing layer are aligned with the top surface and the bottom surface respectively; and a dummy gate structure disposed on the fin shaped structures and across the trench. |
| 地址 |
Hsin-Chu City TW |
