| 发明名称 |
SEMICONDUCTOR DEVICE, ANTENNA SWITCH CIRCUIT, AND WIRELESS COMMUNICATION APPARATUS |
| 摘要 |
Provided is a semiconductor device that includes a drain electrode and a source electrode, a gate electrode, one or more gate-electrode extensions, and a link. The drain electrode and the source electrode have a planar shape of combs in mesh with each other. The gate electrode is provided between the drain electrode and the source electrode, and has a meandering planar shape. The one or more gate-electrode extensions are projected from the gate electrode. The link is confronted with one or both of the drain electrode and the source electrode, and couples the one or more gate-electrode extensions together. |
| 申请公布号 |
US2017025510(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201515302619 |
申请日期 |
2015.03.25 |
| 申请人 |
SONY CORPORATION |
发明人 |
TAKEUCHI Katsuhiko |
| 分类号 |
H01L29/423;H04B1/44;H01L29/778;H01L29/417;H01L29/10 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a drain electrode and a source electrode that have a planar shape of combs in mesh with each other; a gate electrode that is provided between the drain electrode and the source electrode, and has a meandering planar shape; one or more gate-electrode extensions that are projected from the gate electrode; and a link that is confronted with one or both of the drain electrode and the source electrode, and couples the one or more gate-electrode extensions together. |
| 地址 |
Tokyo JP |
