发明名称 |
WEARABLE DEVICES INCORPORATING ION SELECTIVE FIELD EFFECT TRANSISTORS |
摘要 |
Techniques for measuring ion related metrics at a user's skin surface are disclosed. In one aspect, a method for operating a wearable device may involve determining, based on output of one or more ion selective field effect transistor sensors, various physiological conditions such as a state of hydration, a state of skin health, or the cleanliness of the wearable device or an associated garment. |
申请公布号 |
US2017023518(A1) |
申请公布日期 |
2017.01.26 |
申请号 |
US201615282868 |
申请日期 |
2016.09.30 |
申请人 |
Fitbit, Inc. |
发明人 |
Rowe Aaron Alexander;Elliot Thomas Samuel;Prieto Javier L. |
分类号 |
G01N27/414;H01L23/02;H01L23/34;G01N27/416;H01L29/45 |
主分类号 |
G01N27/414 |
代理机构 |
|
代理人 |
|
主权项 |
1. A wearable device for monitoring cleanliness of the wearable device or a garment associated with the wearable device, comprising:
an ion selective field effect transistor; and a reference electrode, wherein the ion selective field effect transistor and the reference electrode are configured to be in direct contact with a user's skin. |
地址 |
San Francisco CA US |