| 摘要 |
A memory cell (1) according to the present invention is provided with: a memory gate structure (2) formed by laminating, in the stated order, a lower memory gate insulation film (10), a charge accumulation layer (EC), an upper memory gate insulation film (11), and a metal memory gate electrode (MG); a first selection gate structure (3) having a metal first selection gate electrode (DG) along a side wall spacer (8a) provided to a side wall of the memory gate structure (2); and a second selection gate structure (4) having a metal second selection gate electrode (SG) along another side wall spacer (8b) provided to a side wall of the memory gate structure (2). It is thereby possible to form the metal memory gate electrode (MG), the metal first selection gate electrode (DG), and the metal second selection gate electrode (SG) from the same metal material as a metal logic gate electrode (LG1), making it possible to form the metal memory gate electrode (MG), the metal first selection gate electrode (DG), and the metal second selection gate electrode (SG) in a series of manufacturing steps for forming the metal logic gate electrode (LG1) comprising a metal material on a semiconductor substrate. |
