| 发明名称 |
Heteroleptic Diazadiene-Containing Tungsten Precursors for Thin Film Deposition |
| 摘要 |
Tungsten precursors represented by the formula W(ND)x(DAD)yRz, where each ND is a neutral donor, each DAD is a diazadiene, each R is an anionic or dianionic ligand and x is in the range of 0 to 4, y is in the range of 1 to 3, z is in the range of 0 to 4 and x+z is greater than or equal to 1. Methods of depositing a film using the tungsten precursors are provided. |
| 申请公布号 |
US2017022609(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615215041 |
申请日期 |
2016.07.20 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
Knisley Thomas;Thompson David |
| 分类号 |
C23C16/455;C07F11/00 |
主分类号 |
C23C16/455 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metal coordination complex having a formula represented by W(ND)x(DAD)yRz, where each ND is a neutral donor, each DAD is a diazadiene, each R is an anionic or dianionic ligand and x is in the range of 0 to 4, y is in the range of 1 to 3, z is in the range of 0 to 4 and x+z is greater than or equal to 1. |
| 地址 |
Santa Clara CA US |
