| 发明名称 |
PHOTOELECTRIC CONVERSION ELEMENT |
| 摘要 |
A photoelectric conversion element includes a superlattice semiconductor layer including barrier sub-layers and quantum sub-layers (quantum dot sub-layers) alternately stacked and also includes a wavelength conversion layer containing a wavelength conversion material converting the wavelength of incident light. The wavelength conversion layer converts incident light into light with a wavelength corresponding to an optical transition from a quantum level of the conduction band of the superlattice semiconductor layer to a continuum level of the conduction band. |
| 申请公布号 |
US2017025558(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615165103 |
申请日期 |
2016.05.26 |
| 申请人 |
Sharp Kabushiki Kaisha ;The University of Tokyo |
发明人 |
YOSHIKAWA Hirofumi;IZUMI Makoto;ARAKAWA Yasuhiko |
| 分类号 |
H01L31/0352;H01L31/054;H01L31/0232;H01L31/109;H01L31/072;H01L31/055 |
主分类号 |
H01L31/0352 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photoelectric conversion element comprising:
a superlattice semiconductor layer including barrier sub-layers and quantum sub-layers alternately stacked; and a wavelength conversion layer containing a wavelength conversion material converting the wavelength of incident light, wherein the wavelength conversion layer converts incident light into light with a wavelength corresponding to an optical transition from a quantum level of the conduction band of the superlattice semiconductor layer to a continuum level of the conduction band. |
| 地址 |
Osaka JP |
