| 发明名称 |
DUAL-MATERIAL MANDREL FOR EPITAXIAL CRYSTAL GROWTH ON SILICON |
| 摘要 |
In one example, a method for fabricating a semiconductor device includes etching a layer of silicon to form a plurality of fins and growing layers of a semiconductor material directly on sidewalls of the plurality of fins, wherein the semiconductor material and surfaces of the sidewalls have different crystalline properties. |
| 申请公布号 |
US2017025539(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615082527 |
申请日期 |
2016.03.28 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Lee Sanghoon;Leobandung Effendi;Wacaser Brent A. |
| 分类号 |
H01L29/78;H01L29/16;H01L29/06;H01L27/088;H01L29/04 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a plurality of fins comprising silicon; and a layer of a semiconductor material grown directly on a sidewall of at least one fin of the plurality of fins, wherein the semiconductor material and a surface of the at least one fin have different crystalline properties. |
| 地址 |
Armonk NY US |
