STRAINED SILICON GERMANIUM FIN WITH CONTROLLED JUNCTION FOR FINFET DEVICES

摘要

FinFET structures are formed on silicon germanium fins. Both the sides and the top surfaces of the source/drain regions of the fins are etched, thereby exposing portions of the channel regions of the fins within gate spacers. Doped source/drain structures are epitaxially grown on the source/drain regions of the fins and exposed channel regions to obtain a uniform junction profile through the fin height direction as well as the fin top surface.

主权项

1. A method comprising:
obtaining a structure comprising a substrate, a plurality of rows of parallel silicon germanium fins on the substrate, a plurality of parallel gate structures on the substrate and extending across the rows of parallel silicon germanium fins, and a plurality of spacers on the parallel gate structures, the parallel silicon germanium fins having channel regions extending through the gate structures and source/drain regions outside the spacers; removing portions of the source/drain regions of the parallel silicon germanium fins, thereby reducing the widths and heights of the source/drain regions of the parallel silicon germanium fins and exposing portions of the channel regions, and epitaxially growing doped source/drain epitaxial structures on the source/drain regions of the parallel silicon germanium fins and the exposed portions of the channel regions.