| 发明名称 |
MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction crossing the first direction and a resistance change film provided between the first wiring and the second wiring. The second wiring includes a first conductive layer and a first intermediate layer including a first region provided between the first conductive layer and the resistance change film. The first intermediate layer includes a material having nonlinear resistance characteristics. |
| 申请公布号 |
US2017025475(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615017899 |
申请日期 |
2016.02.08 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
TAKAGI Takeshi;YAMAGUCHI Takeshi;YAMATO Masaki;ODE Hiroyuki;TANAKA Toshiharu |
| 分类号 |
H01L27/24;H01L45/00;G11C13/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device comprising:
a first wiring extending in a first direction; a second wiring extending in a second direction crossing the first direction; and a resistance change film provided between the first wiring and the second wiring, the second wiring including:
a first conductive layer; anda first intermediate layer including a first region provided between the first conductive layer and the resistance change film, and the first intermediate layer including a material having nonlinear resistance characteristics. |
| 地址 |
Minato-ku JP |
