SHIELDED QFN PACKAGE AND METHOD OF MAKING

摘要

Consistent with an example embodiment, a semiconductor device comprises a device die having bond pads providing connection to device die circuitry and a QFN half-etched lead frame with a package boundary; the QFN half-etched lead frame has a top-side surface and an under-side surface. The QFN half-etched lead frame includes a sub-structure of I/O terminals and a die attach area, the die attach area facilitating device die attachment thereon and the terminal I/O terminals providing connection to the device die bond pads and additional terminals located about the corners of the sub-structure. An envelope of molding compound encapsulates the device die mounted on the top-side surface of the QFN half-etched lead frame. A RF (radio-frequency) shield layer is on the envelope of the molding compound, the RF shield electrically connected to the additional terminals via conductive connections defined in corresponding locations on the envelope of the molding compound.

主权项

1. A semiconductor device comprising:
a device die having bond pads providing connection to device die circuitry; a QFN half-etched lead frame with a package boundary, the QFN half-etched lead frame having a top-side surface and an under-side surface, the QFN half-etched lead frame including:
a sub-structure including I/O terminals and a die attach area, the die attach area facilitating device die attachment thereon and the I/O terminals providing connection to the device die bond pads, andadditional terminals located at each corner of the sub-structure, wherein top-side surfaces of the additional terminals are co-planar with top-side surfaces of the I/O terminals; an envelope of molding compound encapsulating the device die mounted on the top-side surface of the QFN half-etched lead frame, wherein the envelope covers vertical faces of the I/O terminals at the package boundary, and vertical faces of the additional terminals are exposed through the envelope at the package boundary; and a radio frequency (RF) shield layer on a top-side surface and on vertical surfaces of the envelope of the molding compound, wherein the RF shield layer covers and contacts the vertical faces of the additional terminals exposed through the envelope, and the RF shield layer is electrically connected to the additional terminals.