发明名称 METHOD FOR FORMING PATTERNS OF SEMICONDUCTOR DEVICE
摘要 A method for forming patterns of a semiconductor device includes preparing an etch target layer defined with a first region and a second region; forming a regular first feature which is positioned over the etch target layer in the first region and a random feature which is positioned over the etch target layer in the second region; forming a regular second feature over the regular first feature; forming first and second cutting barriers which expose a portion of the random feature, over the random feature; cutting the regular first feature using the regular second feature, to form a regular array feature; cutting the random feature using the first cutting barrier and the second cutting barrier, to form a random array feature; and etching the etch target layer by using the regular array feature and the random array feature, to form a regular array pattern and a random array pattern.
申请公布号 US2017025284(A1) 申请公布日期 2017.01.26
申请号 US201514940221 申请日期 2015.11.13
申请人 SK hynix Inc. 发明人 KANG Chun-Soo
分类号 H01L21/311;H01L21/3213;H01L21/033;H01L21/321 主分类号 H01L21/311
代理机构 代理人
主权项 1. A method for forming patterns of a semiconductor device, comprising: preparing an etch target layer which includes a first region and a second region; forming a regular first feature and a random feature, wherein the regular first feature is positioned over the etch target layer in the first region, wherein the random feature is positioned over the etch target layer in the second region; forming a regular second feature, a first cutting barrier and a second cutting barrier, wherein the regular second feature is positioned over the regular first feature in the first region, wherein the first cutting barrier and the second cutting barrier is positioned over the random feature in the second region; patterning the regular first feature by using the regular second feature as an etching mask to form a regular array feature; patterning the random feature by using the first cutting barrier and the second cutting barrier as an etching mask to form a random array feature; and etching the etch target layer by using the regular array feature and the random array feature as an etch mask to form a regular array pattern and a random array pattern.
地址 Gyeonggi-do KR