| 发明名称 |
Integrated LED Light-Emitting Device and Fabrication Method Thereof |
| 摘要 |
A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer |
| 申请公布号 |
US2017025580(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615289145 |
申请日期 |
2016.10.08 |
| 申请人 |
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
HUANG SHAOHUA;ZENG XIAOQIANG;CHAO CHIH-WEI |
| 分类号 |
H01L33/38;H01L33/48;H01L27/15;H01L33/62 |
主分类号 |
H01L33/38 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting diode (LED), comprising:
an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer. |
| 地址 |
Xiamen CN |
