FORMATION OF BORON-DOPED TITANIUM METAL FILMS WITH HIGH WORK FUNCTION

摘要

A method for forming a Boron doped metallic film, such as Titanium Boron Nitride, is disclosed. The method allows for creation of the metallic film with a high work function and low resistivity, while limiting the increase in effective oxide thickness. The method comprises a thin metallic layer deposition step as well as a Boron-based gas pulse step. The Boron-based gas pulse deposits Boron and allows for the removal of excess halogens within the metallic film. The steps may be repeated in order to achieve a desired thickness of the metallic film.

主权项

1. A method for forming a Boron-doped metallic film comprising:
depositing a thin Boron-doped metallic layer onto a semiconductor device in a chamber, the depositing step comprising:
pulsing a metal halogen gas onto the semiconductor device;purging the semiconductor device and the chamber with an inert gas;pulsing a nitridizing gas onto the semiconductor device;purging the semiconductor device and the chamber with the inert gas; andpulsing a gas onto the thin metallic layer, the pulsing step comprising:
pulsing a Boron-based gas onto the semiconductor device to provide Boron in the Boron-doped metallic film; andpurging the semiconductor device and the chamber with an inert gas.