| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF |
| 摘要 |
A semiconductor memory device may include a memory cell array including a plurality of memory cells; a peripheral circuit unit suitable for performing a program operation and a verification operation to the memory cell array; and a control logic suitable for controlling the peripheral circuit unit to apply a program voltage to a selected memory cell from the plurality of memory cells during the program operation, wherein the program voltage increases by a step voltage as the program operation is repeated, and wherein the step voltage gradually increases as the program operation is repeated. |
| 申请公布号 |
US2017025183(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201614993651 |
申请日期 |
2016.01.12 |
| 申请人 |
SK hynix Inc. |
发明人 |
LEE Hee Youl |
| 分类号 |
G11C16/34;G11C16/10 |
主分类号 |
G11C16/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a memory cell array including a plurality of memory cells; a peripheral circuit unit suitable for performing a program operation and a verification operation to the memory cell array; and a control logic suitable for controlling the peripheral circuit unit to apply a program voltage to a selected memory cell from the plurality of memory cells during the program operation, wherein the program voltage increases by a step voltage as the program operation is repeated, and wherein the step voltage gradually increases as the program operation is repeated. |
| 地址 |
Gyeonggi-do KR |
