BONDING WIRE FOR SEMICONDUCTOR DEVICE

摘要

Provided is a bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, wherein second bonding performance is further improved in a Pd-plated lead frame, and excellent ball bonding performance can be achieved even under high humidity and heat conditions.　In the bonding wire for a semiconductor device, said bonding wire comprising a coating layer composed primarily of Pd on the surface of a Cu alloy core, and a cover alloy layer containing Au and Pd on the surface of the coating layer, the concentration of Cu on the outermost surface of the wire is set at 1–10 at%, and the core contains 0.1–3.0 mass%, in total, of Pd and/or Pt, thus improving second bonding performance and enabling excellent ball bonding performance to be achieved under high humidity and heat conditions. In addition, the maximum concentration of Au in the cover alloy layer is preferably 15–75 at%.